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Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb

Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (2009)

Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ...