Now showing items 1-6 of 6

    • Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth 

      Haakenaasen, Randi; Lauten, Oda; Selvig, Espen; Kongshaug, Kjell Ove; Røer, Eivind Jülke; Hansen, Runar Wattum (2019-06-13)
      We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth ...
    • Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb 

      Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (2009)
      Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ...
    • Descending Infrared Transmission Spectra of CdZnTe Substrates Due to Surface Roughness 

      Selvig, Espen; Kongshaug, Kjell Ove; Haakenaasen, Randi; Lorentzen, Torgeir; Brudevoll, Trond (2019-06-11)
      (111)B-oriented Cd0.96Zn0.04Te substrates with rough surfaces have been found to have infrared (IR) transmission spectra which decrease rapidly in intensity as the photon energy increases. The rough surfaces were produced ...
    • Enhancement in Light Emission From Hg-Cd-Te Due to Surface Patterning 

      Tonheim, Celin Russøy; Sudbø, Aasmund Sveinung; Selvig, Espen; Haakenaasen, Randi (2011)
      Enhancement of light emission from HgCdTe due to surface patterning has been studied by means of photoluminescence (PL) spectroscopy. A triangular pattern of circular holes was etched into the CdTe layer grown on top of ...
    • Improved Passivation Effect Due to Controlled Smoothing of the CdTe-HgCdTe Interface Gradient by Thermal Annealing 

      Haakenaasen, Randi; Selvig, Espen; Heier, Anne Cathrine; Lorentzen, Torgeir; Trosdahl-Iversen, Laila (2019-07-11)
      HgCdTe films grown by liquid phase epitaxy were passivated with CdTe grown by molecular beam epitaxy. A series of annealing tests with different temperatures and durations were then carried out in order to reach a two-fold ...
    • Temperature dependent lattice constant of Al0.90Ga0.10AsySb1-y 

      Breivik, Magnus; Nilsen, Tron Arne; Myrvågnes, Geir; Selvig, Espen; Fimland, Bjørn-Ove (2010)
      Using x-ray diffraction, the in-plane and out-of-plane lattice constants of Al0.90Ga0.10AsySb1−y epilayers grown on GaSb and GaAs substrates were determined between 30 and 398 °C for y = 0.003–0.059. The bulk lattice ...