Now showing items 1-2 of 2

    • Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb 

      Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (2009)
      Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ...
    • Temperature dependent lattice constant of Al0.90Ga0.10AsySb1-y 

      Breivik, Magnus; Nilsen, Tron Arne; Myrvågnes, Geir; Selvig, Espen; Fimland, Bjørn-Ove (2010)
      Using x-ray diffraction, the in-plane and out-of-plane lattice constants of Al0.90Ga0.10AsySb1−y epilayers grown on GaSb and GaAs substrates were determined between 30 and 398 °C for y = 0.003–0.059. The bulk lattice ...